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Electronic Materials, Nano Structures and Devices

 


Prof. Siddharth Rajan

 


Susanne Stemmer, Varistha Chobpattana, and Siddharth Rajan, "Frequency dispersion in III-V metal-oxide-semiconductor capacitors", Applied Physics Letters, 100, 233510 (2012). pdf

 Tian Fang, Ronghua Wang, Huili Xing, Siddharth Rajan, and Debdeep Jena, "Effect of Optical Phonon Scattering on the Performance of GaN Transistors", IEEE Electron Device Letters  Vol. 33, No. 5, May 2012. pdf

P S Park, D N Nath,and  S Rajan, "Quantum Capacitance in N-polar GaN/AlGaN/GaN Heterostructures", IEEE Electron Device Letters  Vol.33, Issue 7, 991-993 (2012). pdf

F. Akyol, D N Nath, S Krishnamoorthy,P S Park, and S. Rajan, "Suppression of Electron Overflow and Efficiency Droop in N polar GaN Green LEDs", Applied Physics Letters, 100, 111118 (2012). pdf

V. Di. Lecce, S. Krishnamoorthy, M. Esposto, T.H.Hung, A. Chini, and S. Rajan, "Metal-oxide barrier extraction by Fowler Nordheim tunneling onset in Al2 O3- on- GaN MOS diodes", Electronics Letters, 48, 347 (2012). pdf

Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra, and Siddharth Rajan, "Polarization engineered 1-dimensional electron gas arrays", Journal of Applied Physics, 12 (2), pp 915–920 (2012).

S D Carnevale, T F Kent, P J Phillips, M J Mills, S Rajan, and R C Myers, "Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence," Nano Letters,12 (2), pp 915–920 (2012). pdf

P S Park, D N Nath, S Krishnamoorthy, and S Rajan, "Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization", Applied Physics Letters, 100, 063507 (2012). pdf

S. Krishnamoorthy, P.S. Park. and S. Rajan, "Demonstration of forward inter-band tunneling in GaN by polarization engineering", Applied Physics Letters, 99, 233504 (2011). pdf

P. Moetakef, T.A. Cain, D.G. Ouellette, J. Y. Zhang, D. O. Klenov, A. Janotti, C.G. Van de Walle, S. Rajan, S. J. Allen, and S. Stemmer, "Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces", Applied Physics Letters, 99, 232116 (2011). pdf

T. Hung, M. Esposto, and S. Rajan, "Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors", Applied Physics Letters, 162104 (2011). pdf

J. Son ,S. Rajan, S. Stemmer, and S. James Allen , "A heterojunction modulation-doped Mott transistor", Journal of Applied Physics, 110, 084503 (2011). pdf

M. Esposto,S. Krishnamoorthy, D. Nath, S. Bajaj, T. Hung, and S. Rajan, "Electrical properties of atomic layer deposited aluminum oxide on gallium nitride", Applied Physics Letters, 99, 133503 (2011). pdf

E. Gur, Z. Zhang, S. Krishnamoorthy, S. Rajan, and S. A. Ringel, "Detailed characterization of deep level defects in InGaN schottky diodes by optical and thermal deep level spectroscopies", Applied Physics Letters, 99, 092109 (2011). pdf

R. Mishra, O.D. Restrepo, S. Rajan, and W. Windl, "First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures", Applied Physics Letters, 98, 232114 (2011). pdf

F. Akyol, D. N. Nath, E. Gur and S. Rajan, "N-Polar III- Nitride green(540 nm) light emitting diode", Japanese Journal of Applied Physics 50 , 052101 (2011). pdf

M. Esposto, A. Chini, and S. Rajan, "Analytical Model for Power Switching GaN- based HEMTs", IEEE Transactions on Electron Devices, Vol. 58, No.5, 1456 (2011). pdf

D. N. Nath, E. Gur, S. A. Ringel, S. Rajan, "Growth model for plasma- assisted molecular beam epitaxy of N-polar and Ga-polar InGaN", Journal of Vacuum Science and Technology. B 29, 021206 (2011). pdf

P. S. Park and S. Rajan, "Simulation of Short-Channel Effects in N- and Ga-polar AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, 58, 3, 704 (2011). pdf

C. Emre Koksal, E. Ekici and S. Rajan, "Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas", Nano Communication Networks, 1(3), 160-172(2010). pdf

S. Krishnamoorthy, D. Nath, F.Akyol, P. S. Park, S. Rajan, "Polarization-engineered GaN/InGaN/GaN tunnel diodes", Applied Physics Letters, 97, 203502 (2010). pdf

D. Nath, S. Keller, E. Hsieh, S.P. DenBaars, U. K. Mishra, and Siddharth Rajan, "Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure", Applied Physics Letters, 97, 162106 (2010). pdf

C. K. Yang, P. Roblin, J. D. Groote, S. A. Ringel, S. Rajan, J. P. Teyssier, C. Poblenz, Y. Pei, J, Speck, U. K. Mishra, "Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Trans. Microwave Theory and Techniques, 58 (5), pp. 1077-1088, May 2010. pdf

S. Kolluri, S. Keller, D. Brown, G. Gupta, U.K. Mishra, S. P. DenBaars, and S. Rajan, “Influence of AlN Interlayer on the Anisotropic Electron Mobility and the Device Characteristics of N-polar AlGaN/GaN MIS-HEMTs Grown on Vicinal Substrates”, Journal of Applied Physics, Journal of Applied Physics, 108, 074502 (2010). pdf

N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, and A. Vert, “Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces", Solid State Electronics 54 (11), p. 1291 (2010). pdf

D. Nath, E. Gur, S. A. Ringel, S. Rajan, “Molecular Beam Epitaxy of N-polar InGaN", Applied Physics Letters 97, 071903 (2010). pdf

P. Ramesh, S. Krishnamoorthy, P.S. Park, S. Rajan, G. Washington, “Distributed intelligence using gallium nitride based active devices”, Proc. of SPIE 7643 (2010). pdf

Y. Pei, S. Rajan, M. Higashiwaki, Z. Chen, S. P. DenBaars, U. K. Mishra, "Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMT's", IEEE Elec. Dev. Lett. 30 (4), Page(s): 313-315. pdf

T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, U. K. Mishra, “Enhancement-Mode m-Plane Heterojunction AlGaN/GaN Transistor", Applied Physics Express, Volume 2, Issue 1, pp. 011001. 

A. C. Tamboli, M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, E. L. Hu, "Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN", J. Electrochem. Soc., Volume 156, Issue 1, pp. H47-H51. pdf

Brown, D. F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S. P. and Mishra, U. K. (2009), "Electron transport in nitrogen-polar high electron mobility transistors", physica status solidi (c), 6: S960–S963. pdf

S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", J. Appl. Phys. 104, 093510. pdf

S. Keller, C. S. Suh, Z. Cheng, R. Chu, S. Rajan, N. Fichtenbaum, M. Furukawa, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metal-organic chemical vapor deposition", Journal of Applied Physics 103, 033708. pdf

A. Raman, S. Dasgupta, D. Brown, S. Rajan, J. S. Speck and U. K. Mishra, "AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit", Jpn. J. Appl. Phys. 47 pp. 3359-3361. 

B. Imer, B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, S. P. DenBaars, "Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, issue 2, pp. 551-555. pdf

R. M. Chu, C. Poblenz, M. H. Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. K. Shen, L. K. Shen, J. S. Speck, and U. K. Mishra, "Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF4 treatment", Applied Physics Express, vol. 1, art no. 061101. 

 S. Keller, C. S. Suh, N. A. Fichtenbaum, M. Furukawa, R. M. Chu, S. Rajan, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104 (9), art no. 093510. pdf

M. H. Wong, Y. Pei, R. M. Chu, S. Rajan, B. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-Face metal-insulator-semiconductor high electron mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29 (10), pp. 1101-1104. pdf

D. F. Brown, S. Rajan, S. Keller, S. P. DenBaars, U. K. Mishra, "Electron Mobility in N-polar GaN/AlGaN/GaN Heterostructures", Appl. Phys. Lett. 93, 042104. pdf

Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck. and U. K. Mishra, "Study of Interface barrier of SiNx/GaN interface for Nitrogen-polar GaN based High Electron Mobility Transistors", J. Appl. Phys. 103, 124508. 

A.V. Vert, S. Rajan, "Properties of oxide deposited on c-plane AlGaN/GaN heterostructure", Electronics Letters, vol.44, no.12, pp.773-774. pdf

S. Rajan, U. K. Mishra, T. Palacios, "AlGaN/GaN HEMTs: Recent Developments and Future Directions", International Journal of High Speed Electronics and Systems, Volume: 18, Issue: 4(2008) pp. 913-922. 

 Imer, B., Schmidt, M., Haskell, B., Rajan, S., Zhong, B., Kim, K., Wu, F., Mates, T., Keller, S., Mishra, U. K., Nakamura, S., Speck, J. S. and DenBaars, S. P. (2008), "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)". physica status solidi (a), 205: 1705–1712. pdf

S. Rajan, A. Chini, M. Wong , J. S. Speck, U. K. Mishra, "N-polar GaN/AlGaN/GaN High Electron Mobility Transistors", Journal of Applied Physics 102, 044501. pdf

M. H. Wong, S. Rajan, R. M. Chu, T. Palacios, C. S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, U. K. Mishra, "N-face High Electron Mobility Transistors with a GaN-spacer", Phys. Stat. Sol. (a) 204, 2049. pdf

S. Rajan, H. Xing, D. Jena, S. P. DenBaars, U. K. Mishra, "Electron Mobility in Graded AlGaN Alloys", Applied Physics Letters 88, 042109. pdf

 F Recht, L McCarthy, S Rajan, A Chakraborty, C Poblenz, A Corrion, J S Speck, U K Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE Electron Device Letters, 27,4, 205-207 (2006). pdf

 T. B. Fehlberg, G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller, S. Rajan, S. Bernardis, J. S. Speck, "Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy", Japanese Journal of Applied Physics Part 2-Letters & Express Letters 45 (37-41): L1090-L1092. pdf

 J. Simon, A. Wang, S. Rajan, H. Xing and D. Jena, "Carrier transport and confinement in polarization-induced 3D electron slabs: Importance of alloy scattering in AlGaN", Applied Physics Letters, Appl. Phys. Lett. 88, 042109. pdf

 J. Simon, K.A. Wang, H. Xing, D. Jena, and S. Rajan, “Polarization-induced 3-dimensional slabs in graded AlGaN layers”, Mater. Res. Soc. Symp. Proc. Vol. 892 (2006). 

A. Corrion, C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, J. S. Speck, "Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy", IEICE Transactions, E89-C (7), pp. 906-912. 


Prof. Wu Lu


Hyeongnam Kim, Jaesun Lee, and Wu Lu, “Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing”, accepted by International Journal of High Speed Electronics and Systems. pdf

Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and George R. Brandes, “Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors”, accepted by International Journal of High Speed Electronics and Systems. pdf

Jaesun Lee, Dongmin Liu, Hyeongnam Kim, Michael L. Shuette, Wu Lu, Jeffrey S. Flynn, and George R. Brandes “Self-Aligned AlGaN/GaN High Electron Mobility Transistors”, Electronics Letters, 2004. pdf

Jaesun Lee, Dongmin Liu, Hyeongnam Kim, and Wu Lu, “Post-Processing annealing Effects on Direct Current and Microwave Performance of AlGaN/GaN High Electron Mobility Transistors”, Applied Physics Letters, vol. 85, pp., 2004. pdf

J. Lee, D. Liu, and W. Lu, “Post Annealing Effects on Device Performance of AlGaN/GaN HFETs”, Solid State Electronics, vol. 48, pp. 1855-1859, 2004. pdf

Z. Lin, H. Kim, J. Lee, and W. Lu, “Thermal Stability of Schottky Contacts on Strained AlGaN/GaN Heterostructures”, Applied Physics Letters, vol. 84, pp. 1585-1587, 2004. pdf

Z. Lin, W. Lu, J. Lee, D. Liu, “Influence of annealed ohmic contact metals on the polarization of A1GaN barrier layer”, Electronics Letters, vol. 39, pp.1412-1414, Sept. 18, 2003. pdf

J. Lee, D. Liu, Z. Lin, W. Lu, J. S. Flynn, and G. R. Brandes, “Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate”, Solid State Electronics, vol.47, pp. 2081-2084, November 2003. pdf

Z. Lin, W. Lu, J. Lee, D. Liu, and G. R. Brandes, “Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: determination and effect of metal work functions”, Appl. Phys. Lett., vol. 82, pp. 4364 – 4366, June 2003. pdf

W. Lu, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performance of AlGaN/GaN field effect transistors dependence of aluminum concentration”, IEEE Trans. Electron Devices, vol. 50, pp. 1069-1074, April, 2003. pdf

W. Lu, R. Schwindt, V. Kumar, E. Piner, and I. Adesida, “DC, RF, and microwave noise performances of AlGaN/GaN HEMT’s on sapphire substrates”, IEEE Trans. Microw. Theory Tech., vol. 49, pp. 2499 – 2504, 2002. pdf

S. L. Rommel, J. H. Jang, W. Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellanbarger, and J. H. Abeles, “The Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma-reactive ion etching chemistries for photonic device fabrication”, J. Vac. Sci. Technol. B, vol. 20, pp. 1327-1330, 2002. pdf

V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, “AlGaN/GaN high electron mobility transistors on SiC with fT of over 120 GHz”, IEEE Electron Device Lett., vol. 23, pp. 455-457, 2002. pdf

W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "A comparative study of surface passivation on AlGaN/GaN HEMTs", Solid State Electronics 46, (2002) 1441-1444. pdf

C. Lee, W. Lu, E. Piner, and I. Adesida, "DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE", Solid State Electronics 46, (2002) 743-746. pdf

V. Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, "High performance 0.25 mm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm",Electronics Lett38, (2002) 252-253. pdf

V. Kumar, W. Lu, F.A. Khan, R. Schwindt, E. Piner, and I. Adesida, "Recessed 0.25 mm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE", Electronics Lett37, (2001) 1483-1485. pdf

V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, and I. Adesida, "0.25 mm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT", Electronics Lett37, (2001) 858-859. pdf

W. Lu, J. W. Yang, M. Asif Khan, and I. Adesida, "AlGaN/GaN HEMT’s on SiC with over 100 GHz fT and low microwave noise", IEEE Trans. Electron Devices48, (2001) 581-585. pdf

W. Lu, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, "Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths", J. Vac. Sci. Technol. B18 (2000) 3488-3492. pdf

W. Lu, A. Kuliev, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, "High performance 0.1 mm gate-length p-type SiGe MODFETs and MOS-MODFETs", IEEE Trans. Electron Devices47, (2000) 1645-1652. pdf

W. Lu, X.W. Wang, R. Hammond, A. Kuliev, S. Koester, J.O. Chu, K. Ismail, T.P. Ma, and I. Adesida, "p-type SiGe transistors with low gate leakage using SiN gate dielectric", IEEE Electron Dev. Lett., 20, (1999) 514-516. pdf

W. Lu, K. Prasad, G. I. Ng, J. H. Lee, and P. Lindstrom, "Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room temperature photoluminescence spectra", J. Phys. D: Appl. Phys. 31(1998) 159-164. pdf

W. Lu, G. I. Ng, B. Jogai, J. H. Lee, and C. S. Park, "Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells", J. Appl. Phys. 82, (1997) 1345-1349. pdf

W. Lu, N. Gu, Y. Wei, and Y.C. Tian, "Ultrathin resist patterning by a synchrotron radiation lithography system", Vacuum48, (1997) 103-105. pdf

W. Lu, J. H. Lee, H. S. Yoon, C. S. Park, K. E. Pyun, H. G. Lee, K. S. Suh, B. Jogai, "Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures", Solid State Comm. 99, (1996) 713-716. 

W. Lu, H.Y. Shen, N. Gu, J.H. Lee, C.S. Park, and Y. Wei, "Fabrication and microwave response of YBaCuO superconductive thin film nanobridges", Jpn. J. Appl. Phys.34 (1995) L1644-L1646. 

N. Gu, X.M. Yang, H.Y. Shen, W. Lu, and Y. Wei, "Electrical switch properties of CuTCNQ organic thin film", Synthetic Metals71 (1995) 2221-2222.

W. Lu, N. Gu, Z.H. Lu, X.M. Yang, and Y. Wei, "Langmuir-Blodgett resist films for microlithography by exposure to a scanning electron microscope", Thin Solid Films242 (1994) 178-182. pdf

W. Lu, H.Y. Shen, N. Gu, C.W. Yuan, Z.H. Lu, and Y. Wei, "Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield", Thin Solid Films243 (1994) 501-504. pdf

W. Lu, N. Gu, Z.H. Lu, and Y. Wei, "An investigation of the backscattering yield of Langmuir-Blodgett resist films in electron beam lithography", Modeling Simul. Mater. Sci. Eng. , 2 (1994) 913-920. pdf

N. Gu, W. Lu, S.M. Pang, C.W. Yuan, and Y. Wei, "Photovoltaic effect in CuTCNQ organic thin films", Thin Solid Films243 (1994) 468-471. pdf

W. Lu, J.X. Tao, N. Gu, "Proximity effect correction data processing system for electron beam lithography", J. Vac. Sci. Technol. B11(1993) 1906-1907.

Z.H. Lu, J.Y. Fang, N. Gu, W. Lu, Y. Wei, and P. Stroeve, "Monolayer compressed by steady laminar flowing subphase", J. Colloid Interface Sci.156 (1993) 462-466.

N. Gu, W. Lu, and Y. Wei, "Nanometer-sized passageways within CuTCNQ crystalline grains prepared by spontaneous electrolyses", Chin. Sci. Bulletin40 (1995) 962-966.

X.M. Yang, N. Gu, W. Lu, Z.H. Lu, and Y. Wei, "Structure study of polymethylmethacrylate Langmuir-Blodgett monolayers by atom force microscopy", Chin. Sci. Bulletin40 (1995) 145-149.